摘要
We report the preparation of low density self-assembled InGaAs on GaAs grown by metal-organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total coverage of quantum dots, and growth temperature, high optical quality quantum dots with density as low as 5 × 106 cm -2 have been obtained. Using local optical excitation through a sub-micron aperture of a single quantum dot, its spectral lines associated with the exciton, biexciton, multi-exciton, and charged exciton have been resolved and identified. Photon correlation measurements show that the single quantum dot can successfully emit antibunched photons.
原文 | English |
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頁(從 - 到) | 512-515 |
頁數 | 4 |
期刊 | Nanotechnology |
卷 | 17 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 28 一月 2006 |