Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition

Tung Po Hsieh*, Hsiang Szu Chang, Wen Yen Chen, Wen-Hao Chang, Tzu Min Hsu, Nien Tze Yeh, Wen Jeng Ho, Pei Chin Chiu, Jen Inn Chyi

*Corresponding author for this work

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

We report the preparation of low density self-assembled InGaAs on GaAs grown by metal-organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total coverage of quantum dots, and growth temperature, high optical quality quantum dots with density as low as 5 × 106 cm -2 have been obtained. Using local optical excitation through a sub-micron aperture of a single quantum dot, its spectral lines associated with the exciton, biexciton, multi-exciton, and charged exciton have been resolved and identified. Photon correlation measurements show that the single quantum dot can successfully emit antibunched photons.

原文English
頁(從 - 到)512-515
頁數4
期刊Nanotechnology
17
發行號2
DOIs
出版狀態Published - 28 一月 2006

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