Growth of high indium InGaN films using a combined deposition technique and its application for long wavelength emitter

Kun Ching Shen, Ming Chien Jiang, Tzu Yu Wang, Ray-Hua Horng, Dong Sing Wuu

研究成果: Conference contribution同行評審

摘要

High indium content InGaN films were grown on sapphire substrate using low temperature pulsed laser deposition (PLD) with nitrogen plasma and a specific target. The controllable target consists of two separate sections: an indium sheet with periodic rectangular-holes and a standard GaN wafer. By changing the rectangular-hole area, a modulated indium vapor was excited by pulsed laser and introduced into the InGaN deposition reaction, contributing the increase in the incorporation of indium into the InGaN film. The structural and optical stability of the 33 and 60% indium InGaN revealed no differences in the line-shape and peak position even after annealing at 800°C for 75 min from x-ray diffraction and luminescence results. Moreover, such high thermal stability of 60% InGaN film was put in metal organic chemical vapor deposition (MOCVD) to regrow GaN layer, the peak position of 860 nm remained unchanged after MOCVD regrowth. The flat and uniform of regrown sample indicates that the PLD method used in this study is indeed promising for the development long wavelength of high indium content InGaN emitters.

原文English
主出版物標題Light-Emitting Diodes
主出版物子標題Materials, Devices, and Applications for Solid State Lighting XVII
DOIs
出版狀態Published - 3 六月 2013
事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII - San Francisco, CA, United States
持續時間: 4 二月 20137 二月 2013

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8641
ISSN(列印)0277-786X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
國家United States
城市San Francisco, CA
期間4/02/137/02/13

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