Growth and x-ray characterization of an InN film on sapphire prepared by metallorganic vapor phase epitaxy

Wei-Kuo Chen*, Yung Chung Pan, Heng Ching Lin, Jehn Ou, Wen Hsiung Chen, Ming Chih Lee

*Corresponding author for this work

研究成果: Article

28 引文 斯高帕斯(Scopus)

摘要

We report the successful growth of an InN film by metallorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375°C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec, which explains the superior crystalline quality of our epitaxial film.

原文English
期刊Japanese Journal of Applied Physics, Part 2: Letters
36
發行號12 B
DOIs
出版狀態Published - 1 十二月 1997

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