Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

W. C. Fan, S. H. Huang, Wu-Ching Chou*, M. H. Tsou, C. S. Yang, C. H. Chia, Nguyen Dang Phu, Luc Huy Hoang

*Corresponding author for this work

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by lowerature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 4.0 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of ZnTe QDs grown on ZnSe buffer layers because the strain between ZnTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch's stretching exponential well fits the decay profiles of ZnTe/Zn1-xMgxSe QDs.

原文English
頁(從 - 到)186-190
頁數5
期刊Journal of Crystal Growth
425
DOIs
出版狀態Published - 28 七月 2015

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