Growth and characterization of single crystalline Ga-doped ZnO thin films using metal-organic chemical vapor deposition

Ray-Hua Horng, Chiung Yi Huang, Chen Yang Yin, Parvaneh Ravadgar, Dong Sing Wuu

研究成果: Conference contribution同行評審

摘要

Ga-doped ZnO (GZO) thin films with high thermal stability and high carrier mobility are essential to develop transparent conductive electrodes (TCEs). In this study, the carrier concentration and the electrical resistivity of GZO thin films are related to the Ga flow rates. GZO thin films have been grown on c-plane sapphire substrates with Ga doping concentration of 1020 cm-3 using metal-organic chemical vapor deposition technique. Crystalline structures of as-grown and post-annealed samples are studied by x-ray diffraction technique. Their transparency is also tracked by n & k analyzer. Under optimized growth parameters, the lowest resistivity of GZO is 5.5 × 10-4 ohm-cm.

原文English
主出版物標題Wide-Bandgap Semiconductor Materials and Devices 14
頁面3-9
頁數7
版本2
DOIs
出版狀態Published - 21 十月 2013
事件Wide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting - Toronto, ON, Canada
持續時間: 12 五月 201316 五月 2013

出版系列

名字ECS Transactions
號碼2
53
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

ConferenceWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
國家Canada
城市Toronto, ON
期間12/05/1316/05/13

指紋 深入研究「Growth and characterization of single crystalline Ga-doped ZnO thin films using metal-organic chemical vapor deposition」主題。共同形成了獨特的指紋。

引用此