Grain-size-related transient terahertz mobility of femtosecond-laser- annealed polycrystalline silicon

Y. C. Wang, Hye Young Ahn, C. H. Chuang, Y. P. Ku, C. L. Pan*

*Corresponding author for this work

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

We investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtosecond laser annealing is elucidated by optical-pump-terahertz-probe and terahertz time-domain spectroscopies. The transient conductivities of FLA-processed poly-Si with large (∼500 nm) and small (∼50 nm) grain sizes were both well fitted by the Drude model in the terahertz regime from 0.4 to 2 THz. The transient mobilities of these materials were determined to be 175±19.4 and 94.5±20.2 cm 2/V∈s, respectively. After annealing, reduction of deep-state density rather than tail-state density in large-grain poly-Si is responsible for its higher mobility.

原文English
頁(從 - 到)181-185
頁數5
期刊Applied Physics B: Lasers and Optics
97
發行號1
DOIs
出版狀態Published - 1 九月 2009

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