Grain growth by DIGM in Ni thin film under high tensile stress

Zhengyi Jia*, G. Z. Pan, King-Ning Tu

*Corresponding author for this work

研究成果: Conference article同行評審

摘要

Electron beam evaporated Ni thin films are found to have tensile stress of 1.2 Gpa. The stress is relieved upon heating, accompanied by grain growth. The calculated stress matches the experimental result and a mechanism of grain growth is proposed.

原文English
頁(從 - 到)95-101
頁數7
期刊Materials Research Society Symposium - Proceedings
516
出版狀態Published - 1 十二月 1998
事件Proceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
持續時間: 13 四月 199816 四月 1998

指紋 深入研究「Grain growth by DIGM in Ni thin film under high tensile stress」主題。共同形成了獨特的指紋。

引用此