Germanium-source tunnel field effect transistors with record high I ON/IOFF

Hwan Kim Sung, Hei Kam, Chen-Ming Hu, Tsu Jae King Liu

研究成果: Conference contribution同行評審

211 引文 斯高帕斯(Scopus)

摘要

Tunnel field effect transistors (TFETs) with record high I ON/IOFF ratio (>106) for low-voltage (0.5V) operation are achieved by using germanium in the source region to achieve a small tunnel bandgap. The measured data are well explained by the theoretical band-to-band tunneling current model. Using the calibrated analytical model, the energy-delay performance of TFET-based technology is compared against that of conventional CMOS technology, at the 65nm node. The TFET is projected to provide dramatic improvement in energy efficiency for performance in the range up to ∼0.5GHz.

原文English
主出版物標題2009 Symposium on VLSI Technology, VLSIT 2009
頁面178-179
頁數2
出版狀態Published - 16 十一月 2009
事件2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
持續時間: 16 六月 200918 六月 2009

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
ISSN(列印)0743-1562

Conference

Conference2009 Symposium on VLSI Technology, VLSIT 2009
國家Japan
城市Kyoto
期間16/06/0918/06/09

指紋 深入研究「Germanium-source tunnel field effect transistors with record high I ON/IOFF」主題。共同形成了獨特的指紋。

引用此