Ge channel MOSFETs directly on silicon

Che Wei Chen, Cheng Ting Chung, Chao-Hsin Chien

研究成果: Conference contribution同行評審

摘要

This paper presents high performance Ge/Si diode, trigate Ge PFET, junctionless trigate Ge PFET and strained Ge NFET directly on Si wafer. The leakage current of the Ge/Si diode is as low as <10-7 A/cm2. Trigate PFET depicts a driving current of 22 μA/μm at VG = -2 V and a low OFF-current of 3 nA/μm at VG = 2 V. Junctionless trigate PFET shows ION/IOFF ratio of ∼6×104 (ID), ∼6×105 (IS), and the remarkably low off-current of 450 pA/μm at VD = -0.1 V. Strained trigate Ge NFET is demonstrated.

原文English
主出版物標題2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781479923342
DOIs
出版狀態Published - 13 三月 2014
事件2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China
持續時間: 18 六月 201420 六月 2014

出版系列

名字2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
國家China
城市Chengdu
期間18/06/1420/06/14

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