It is shown that lightly doped drain (LDD) devices exhibit substantial reductions in gate-induced drain leakage (GIDL) current as compared with the conventional single-drain (SD) device. The fully overlapped LDD structure can exhibit low GIDL approaching that of the nonoverlapped LDD as the n- concentration is increased toward 1 × 1019/cm3. A longer n- spacer also helps reduce GIDL in the fully overlapped devices. These GIDL design constraints must be weighed against the hot-electron reliability and device performance constraints in order to optimize the drain design.
|頁（從 - 到）||49-50|
|期刊||Digest of Technical Papers - Symposium on VLSI Technology|
|出版狀態||Published - 1 十二月 1991|
|事件||1991 Symposium on VLSI Technology - Oiso, Jpn|
持續時間: 28 五月 1991 → 30 五月 1991