Gas sensing mechanism in Pentacene-based OTFTs

Hsiao-Wen Zan*, Yun Chia Liang, Wuu Wei Tsai, Yuh-Shyong Yang

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

The ammonia gas sensing behaviors of pentacene-based organic thin-film transistors were characterized by analyzing parameters such as the threshold voltage, the field-effect mobility and the subthreshold swing. It was firstly found that the bias-induced carriers strongly enhanced the gas sensing. Bias-stress model successfully explained the experimental results. The ammonia-induced threshold voltage shift was probable due to the generation of nitrogen- or hydrogen-related defect states in the pentacene film.

原文English
主出版物標題IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
頁面544-546
頁數3
出版狀態Published - 1 十二月 2007
事件International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
持續時間: 3 七月 20076 七月 2007

出版系列

名字IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
國家Taiwan
城市Taipei
期間3/07/076/07/07

指紋 深入研究「Gas sensing mechanism in Pentacene-based OTFTs」主題。共同形成了獨特的指紋。

引用此