GaN metal-semiconductor-metal photodetectors prepared on nanorod template

S. J. Chang, S. M. Wang, P. C. Chang, Cheng-Huang Kuo, S. J. Young, T. P. Chen

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication of GaN-based metalsemiconductormetal photodetectors (PDs) on a conventional flat sapphire substrate and on a nanorod template. Compared with the PD prepared on the flat sapphire substrate, it was found that leakage current of the PD prepared on the nanorod template was significantly smaller due to the improved crystal quality. It was also found that we can reduce the photoconductive gain and enhance ultraviolet-to-visible rejection ratio by using the nanorod template.

原文English
文章編號14
頁(從 - 到)625-627
頁數3
期刊IEEE Photonics Technology Letters
22
發行號9
DOIs
出版狀態Published - 16 四月 2010

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