GaN-based Indiumtin-oxide light emitting diodes with nanostructured silicon upper contacts

Cheng-Huang Kuo*, S. J. Chang, H. Kuan

*Corresponding author for this work

研究成果: Article同行評審

摘要

GaN-based indiumtin-oxide (ITO) light emitting diodes (LEDs) with p-GaN, n+-short period superlattice (SPS) and nanostructured silicon contact layers were fabricated. It was found that surface of the ITO LED with nanostructured silicon layer was very rough. It was also found that 20mA forward voltages measured from ITO LEDs with p-GaN, n+-SPS and nanostructured silicon contact layers were 6.01, 3.25 and 3.26V, respectively. Compared with ITO LED with n+-SPS, it was found that output power of ITO LED with nanostructured silicon contact was 17 larger. Furthermore, it was found that ITO LED with nanostructured silicon contact was more reliable.

原文English
頁(從 - 到)110-112
頁數3
期刊IET Optoelectronics
1
發行號3
DOIs
出版狀態Published - 11 九月 2007

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