GaN-Based Enhancement-Mode Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using LiNbO3 Ferroelectric Insulator on Gate-Recessed Structure

Ching Ting Lee, Chang Lin Yang, Chun Yen Tseng, Jhe Hao Chang, Ray-Hua Horng

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

To fabricate AlGaN/gallium nitride (GaN) enhancement-mode metal-oxide-semiconductor high-electron mobility transistors (E-MOSHEMTs), the gate-recessed structure and the LiNbO3 ferroelectric film were utilized in this paper. The LiNbO3 ferroelectric films deposited on the photoelectrochemically etched gate-recessed regions of the AlGaN/GaN E-MOSHEMTs as the gate insulator using a pulsed laser deposition system. The polarization-induced charges of the 2-D electron gas resided on the interface between the AlGaN and GaN layers could be modulated by the C+ domains of the crystalline (006) LiNbO3 ferroelectric films annealed in an oxygen ambience at 600 °C for 30 min. When the 15-nm-thick AlGaN was formed in the gate-recessed regions, the threshold voltage and the maximum transconductance of the resulting gate-recessed LiNbO3/AlGaN/GaN E-MOSHEMTs were +0.40 V and 56.0 mS/mm, respectively. Furthermore, the flicker noise was the dominant noise in the resulting E-MOSHEMTs. The associated normalized low-frequency noise power density of 8.1×1011 Hz-1 was measured.

原文English
文章編號7151822
頁(從 - 到)2481-2487
頁數7
期刊IEEE Transactions on Electron Devices
62
發行號8
DOIs
出版狀態Published - 7 七月 2015

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