GaAs/AIGaAs Power Heterobipolar Transistor Fabricated on Silicon Substrate

Daisuke Ueda, W. S. Lee, T. M.A.D. Costa, J. S. Harris

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

A GaAs/AIGaAs power HBT was fabricated on a silicon substrate, where the thermal conductance is reduced by a factor of 2-8 compared with that on bulk GaAs. Owing to the newly developed monolithically grown ballast resistor over an emitter region, the experimentally fabricated device has shown the highest collector current of over 2-5 A for a device with an active device area of 014 mm2.

原文English
頁(從 - 到)1268-1269
頁數2
期刊Electronics Letters
25
發行號19
DOIs
出版狀態Published - 17 八月 1989

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