Fundamental study on reducing on-resistance by introducing strain into silicon vertical power devices

Takeya Inoue, Takuya Hoshii, Takuo Kikuchi, Hidehiko Yabuhara, Kazuyuki Ito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Junichi Tonotani, Kazuo Tsutsui

研究成果: Conference contribution同行評審

摘要

In this paper, we examine the feasibility of reducing the on-resistance by introducing strain into the drift layer of Si vertical power devices. The strain effect on the resistance to vertical conduction in the n--Si layer was evaluated using a four-point bending method. The experimental data correspond well with the theoretical values calculated using the piezoresistive coefficient. These results indicate that strain management is a promising method for reducing the on-resistance of Si vertical power devices.

原文English
主出版物標題2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
發行者Institute of Electrical and Electronics Engineers Inc.
頁面407-409
頁數3
ISBN(電子)9781538665084
DOIs
出版狀態Published - 三月 2019
事件2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
持續時間: 12 三月 201915 三月 2019

出版系列

名字2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
國家Singapore
城市Singapore
期間12/03/1915/03/19

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