Functionalized single-walled carbon-nanotube-blended P3HT-based thin-film transistors with multiwalled carbon-nanotube source and drain electrodes

Chia Hao Chang*, Chao-Hsin Chien

*Corresponding author for this work

研究成果: Article

8 引文 斯高帕斯(Scopus)

摘要

We demonstrate the superior performance of thin-film transistors with a functionalized single-walled carbon-nanotube-blended poly(3-hexylthiophene) (F-SWCNT-P3HT) channel and multiwalled CNT source and drain electrodes (MWCNT S/Ds). Compared with transistors with a P3HT channel and gold electrodes, the mobility of transistors with an F-SWCNT-P3HT channel and MWCNT S/Ds is increased by more than one order of magnitude, i.e., from 0.0052 to 0.072 cm 2/V ċ s. This improvement results not only from the well-known fast carrier transport assisted by the blend of F-SWCNTs but also, more importantly, from the reduced contact resistance between P3HT and MWCNT S/Ds.

原文English
文章編號6012504
頁(從 - 到)1457-1459
頁數3
期刊IEEE Electron Device Letters
32
發行號10
DOIs
出版狀態Published - 1 十月 2011

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