Free-standing a-plane GaN substrates grown by HVPE

Yin Hao Wu*, Yen Hsien Yeh, Kuei Ming Chen, Yu Jen Yang, Wei-I Lee

*Corresponding author for this work

研究成果: Conference contribution

摘要

A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.

原文English
主出版物標題Gallium Nitride Materials and Devices VII
DOIs
出版狀態Published - 16 四月 2012
事件Gallium Nitride Materials and Devices VII - San Francisco, CA, United States
持續時間: 23 一月 201226 一月 2012

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8262
ISSN(列印)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices VII
國家United States
城市San Francisco, CA
期間23/01/1226/01/12

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    Wu, Y. H., Yeh, Y. H., Chen, K. M., Yang, Y. J., & Lee, W-I. (2012). Free-standing a-plane GaN substrates grown by HVPE. 於 Gallium Nitride Materials and Devices VII [82621Z] (Proceedings of SPIE - The International Society for Optical Engineering; 卷 8262). https://doi.org/10.1117/12.907683