Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

Shao Pin Chiu*, Hui Fang Chung, Yong Han Lin, Ji Jung Kai, Fu Rong Chen, Juhn-Jong Lin

*Corresponding author for this work

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few νm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

原文English
文章編號105203
頁數7
期刊Nanotechnology
20
發行號10
DOIs
出版狀態Published - 8 五月 2009

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