Formation of vanadium silicides by the interactions of v with bare and oxidized Si wafers

King-Ning Tu*, J. F. Ziegler, C. J. Kircher

*Corresponding author for this work

研究成果: Article同行評審

62 引文 斯高帕斯(Scopus)

摘要

Formation of vanadium silicides by the interactions of vanadium with bare and oxidized Si wafers has been studied by both x-ray diffraction and He ion backscattering techniques. X-ray diffraction was used to identify phases and ion backscattering to profile compositional changes. In the case of V on Si, the silicide VSi2, which is a silicon-rich phase, was found to form at temperatures from 600 to 1000°C. In the case of V on SiO2, reactions took place only at temperatures above 800°C, and the reaction products were identified to be V3Si, V5SI3, and V2O5. Both V3Si and V5Si 3 are vandium-rich phases, and the V3Si that we found was a continuous layer between the substrate and the other two phases, and became superconducting at about 15°K.

原文English
頁(從 - 到)493-495
頁數3
期刊Applied Physics Letters
23
發行號9
DOIs
出版狀態Published - 1 十二月 1973

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