Formation of m-plane aln on plasma-nitrided m-plane sapphire

Zhih Cheng Ma, Kun An Chiu, Lin Lung Wei, Li Chang*

*Corresponding author for this work

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Microwave plasma using a gas mixture of N2 and H2 has been applied for the nitridation of m-plane sapphire substrate to form a thick epitaxial AlN film. The X-ray diffraction results show that the AlN films formed on the sapphire surface by nitridation for a period from 10-60 min are in (100) orientation and have an epitaxial relationship with the substrate. The thickness of the nitride film increases with nitridation time and approaches about 0.5 μm after nitridation for 1 h, while the film surface becomes rough. The film quality is reasonably good, as evaluated with the X-ray rocking curve of (100) AlN. Faceted voids in the sapphire substrate underneath the AlN are also observed with inclined a-plane facets after nitridation.

原文English
文章編號SC1033
期刊Japanese Journal of Applied Physics
58
發行號SC
DOIs
出版狀態Published - 1 六月 2019

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