Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique

C. Y. Chien, Y. R. Chang, R. N. Chang, M. S. Lee, Pei-Wen Li

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

Placement of quantum dots (QDs) and insight into QD's basic internal structure and optical properties lay nature cornerstones for advanced photonic devices. We report a manageable growth method for placing dense three-dimensional Ge QD arrays in a uniform or a grading size distribution, using thermal oxidation of poly-SiGe in layer-cake techniques. The QD size and spatial density in each stack could be well modulated by Ge content in poly-Si1-xGex, oxidation and underlay buffer layer conditions. Size-dependent internal structure, strain, and photoluminesce properties of Ge QDs are systematically investigated. Optimization of processing conditions was carried out for producing dense Ge QD arrays for maximizing photovoltaic efficiency.

原文English
主出版物標題2010 10th IEEE Conference on Nanotechnology, NANO 2010
頁面924-927
頁數4
DOIs
出版狀態Published - 1 十二月 2010
事件2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
持續時間: 17 八月 201020 八月 2010

出版系列

名字2010 10th IEEE Conference on Nanotechnology, NANO 2010

Conference

Conference2010 10th IEEE Conference on Nanotechnology, NANO 2010
國家Korea, Republic of
城市Ilsan, Gyeonggi-Do
期間17/08/1020/08/10

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