Flower-like distributed self-organized Ge dots on patterned Si (001) substrates

Huang Ming Lee*, Tsung Hsi Yang, Guangli Luo, Edward Yi Chang

*Corresponding author for this work

研究成果: Article同行評審

5 引文 斯高帕斯(Scopus)

摘要

Self-organized Ge dots were obtained utilizing ultra high vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The dimensions of these etched Si mesa are 65/23/200 nm in diameter/height/period. The sizes and arrangement of the Ge dots were characterized by scanning electron microscopy and atomic force microscopy. The Ge dots have an average base width of 10 nm and the size is quite uniform. Due to the energetically favorable sites, the Ge dots tend to form homocentrically along the Si mesa edge, and their distribution is flower-like.

原文English
頁(從 - 到)L718-L720
期刊Japanese Journal of Applied Physics, Part 2: Letters
42
發行號6 B
DOIs
出版狀態Published - 15 六月 2003

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