Flow rate's influence on low temperature silicon oxide deposited by atmospheric pressure plasma jet for organic thin film transistor application

Kow-Ming Chang, S. S. Huang, C. H. Cheng

研究成果: Conference contribution同行評審

摘要

Low temperature processes and high quality gate insulator are very important for organic thin film transistors (OTFTs). We utilized atmospheric pressure plasma jet (APPJ) to deposit silicon oxide as gate insulator of OTFTs at low temperature. We found carrier gas's flow rate would influence the deposition mechanism which lead to influence surface roughness and film quality. Leakage current density of our proposed silicon oxide was about 2.53E-8 A/cm 2 at 0.5 MV/cm. Our proposed OTFTs shows a low subthreshold swing of only 700 mV/dec., a low threshold voltage of -0.8 V, a low operation voltage of -2 V. The low-voltage OTFTs would reduce the power consummation of flexible display.

原文English
主出版物標題Thin Film Transistors 10, TFT 10
頁面255-264
頁數10
版本5
DOIs
出版狀態Published - 1 十二月 2010
事件10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
持續時間: 11 十月 201015 十月 2010

出版系列

名字ECS Transactions
號碼5
33
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Conference

Conference10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
國家United States
城市Las Vegas, NV
期間11/10/1015/10/10

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