Flow-rate modulation epitaxy of InP by metalorganic chemical vapor deposition

Wei-Kuo Chen*, Jyh-Cheng Chen, J. F. Chen, C. R. Wie, P. L. Liu, D. M. Hwang

*Corresponding author for this work

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We have used the flow-rate modulation epitaxy technique to grow InP in a modified atomospheric-pressure metalorganic chemical vapor deposition system. We demonstrate the deposition of a monolayer in each growth cycle. The growth is mass-transport-limited at higher substrate temperatures, i.e., 420 to 580°C, and is kinetic-limited with an activation energy of 0.57 eV for lower temperatures. The surface morphology is specular even for InP layers grown as low as 330°C.

原文English
頁(從 - 到)100-103
頁數4
期刊Proceedings of SPIE - The International Society for Optical Engineering
1144
DOIs
出版狀態Published - 28 十一月 1989

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