Flip-chip-based multichip module for low phase-noise V-band frequency generation

Li Han Hsu*, Dan Kuylenstierna, Rumen Kozhuharov, Marcus Gavell, Camilla Karnfelt, Wee Chin Lim, Herbert Zirath, Edward Yi Chang

*Corresponding author for this work

研究成果: Article

摘要

This paper reports on a flip-chip (FC)-based multichip module (MCM) for low phase-noise (PN) V-band frequency generation. A high-performance ×8 GaAs metamorphic high-electron mobility transistor monolithic microwave integrated circuit (MMIC) multiplier and a low PN 7-GHz GaAs InGaP heterojunction bipolar transistor (HBT) MMIC oscillator were used in the module. The microstrip MMICs were FC bonded to an Al2O3 carrier with patterns optimized for low-loss transitions. The FC-based module was experimentally characterized to have a PN of -88 dBc/Hz @ 100-kHz offset and -112 dBc/Hz @ 1-MHz offset with an output power of 11 dBm. For comparison, the MMICs were also FC bonded as individual chips and the performance was compared with the bare dies without FC bonding. It was verified that the FC bonding has no detrimental effect on the MMIC performance. The tests revealed that the FC module provided improved performance. To our best knowledge, this is the first FC-based module for millimeter-wave frequency generation. The module also presents one of the best PN reported for millimeter-wave frequency sources.

原文English
文章編號5535224
頁(從 - 到)2408-2419
頁數12
期刊IEEE Transactions on Microwave Theory and Techniques
58
發行號9
DOIs
出版狀態Published - 1 九月 2010

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  • 引用此

    Hsu, L. H., Kuylenstierna, D., Kozhuharov, R., Gavell, M., Karnfelt, C., Lim, W. C., Zirath, H., & Chang, E. Y. (2010). Flip-chip-based multichip module for low phase-noise V-band frequency generation. IEEE Transactions on Microwave Theory and Techniques, 58(9), 2408-2419. [5535224]. https://doi.org/10.1109/TMTT.2010.2057135