Flicker noise in nanoscale pMOSFETs with mobility enhancement engineering and dynamic body biases

Kuo Liang Yeh*, Chih You Ku, Wei Lun Hong, Jyh-Chyurn Guo

*Corresponding author for this work

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

The uni-axial compressive strain from e-SiGe S/D combined with dynamic body biases effect on flicker noise of pMOSFETs is presented in this paper. This compressive strain contributes higher mobility but the worse flicker noise in terms of higher SID/ID2 becomes a potential killer to RF/analog circuits. Forward body biases (FBB) can reduce the flicker noise but the degraded body bias effect in strained pMOSFETs makes it not as efficient as the standard ones without strain. Hooge's mobility fluctuation model is adopted to explain the uni-axial strain and dynamic body biases effect on flicker noise. The increase of Hooge parameter αH is identified the key factor responsible the degraded flicker noise in strained pMOSFETs.

原文English
主出版物標題Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
頁面347-350
頁數4
DOIs
出版狀態Published - 27 十月 2009
事件2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009 - Boston, MA, United States
持續時間: 7 六月 20099 六月 2009

出版系列

名字Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN(列印)1529-2517

Conference

Conference2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
國家United States
城市Boston, MA
期間7/06/099/06/09

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