Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor

Chao Ching Cheng*, Chao-Hsin Chien, Guang Li Luo, Jun Cheng Liu, Yi Cheng Chen, Yao Feng Chang, Shin Yuan Wang, Chi Chung Kei, Chien Nan Hsiao, Chun Yen Chang

*Corresponding author for this work

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

The authors present a linear-regression method based on a five-element circuit model to correct measured capacitance-voltage and conductance-voltage curves. This model explains the effects of series resistance and parasitic capacitance/inductance on the frequency dispersion of measured capacitance and the magnification of measured conductance. These extracted parasitic components show significant dependencies on the geometry of capacitor structure, thereby causing different frequency-dependent capacitance characteristics in measurements.

原文English
頁(從 - 到)130-133
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
27
發行號1
DOIs
出版狀態Published - 17 二月 2009

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