First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM

Fu Kuo Hsueh, Chang Hong Shen, Jia Min Shieh, Kai Shin Li, Hsiu Chih Chen, Wen Hsien Huang, Hsing Hsiang Wang, Chih Chao Yang, Tung Ying Hsieh, Chang Hsien Lin, Bo Yuan Chen, Yu Shao Shiao, Guo Wei Huang, Oi Ying Wong, Po-Hung Chen, Wen Kuan Yeh

研究成果: Conference contribution同行評審

10 引文 斯高帕斯(Scopus)

摘要

For the first time, we report low-cost heterogeneously integrated sub-40nm epi-like Si monolithic internet of thins (IoT) 3D+-IC with wireless communication, light-electricity power management and vertical ReRAM (VRRAM) modules. High current driving multi-channel 3D+ UTB-MOSFETs (600μA/282μA@VG= ± 1V for 10-channel P/N FETs) was fabricated by low thermal budget super-CMP-planarized visible laser-crystallized epi-like Si channel and CO2 far-infrared laser annealing (CO2-FIR-LA) activation technologies that support a 6.8GHz high frequency VCO circuits, 0.5V low-voltage power management circuit and drives 20nm 4-layer VRRAM (Set/Reset <1.2V/1.8V, 3-bits/cell). This unique TSV-free monolithic 3D+IC process provides the superiority in 3D hetero-integration; we successfully integrate these circuits in a low cost, small footprint, fully functionalized 3D+ IoT chip.

原文English
主出版物標題2016 IEEE International Electron Devices Meeting, IEDM 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面2.3.1-2.3.4
ISBN(電子)9781509039012
DOIs
出版狀態Published - 31 一月 2017
事件62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
持續時間: 3 十二月 20167 十二月 2016

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
ISSN(列印)0163-1918

Conference

Conference62nd IEEE International Electron Devices Meeting, IEDM 2016
國家United States
城市San Francisco
期間3/12/167/12/16

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