Finite-element modeling of stress distribution and migration in interconnecting studs of a three-dimensional multilevel device structure

L. T. Shi*, King-Ning Tu

*Corresponding author for this work

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

A finite-element method taking into account plasticity and temperature-dependent properties of materials was used to calculate the stress distribution in interconnecting studs of a three-dimensional multilevel device structure. A good correlation between the calculated locations of stress concentration and the experimentally observed failure sites was obtained. On the basis of this, the failure mechanisms associated with different stress components were inferred. In addition, the calculated locations of stress concentration were found to migrate as temperature changed. The phenomenon was also observed experimentally.

原文English
頁(從 - 到)1516-1518
頁數3
期刊Applied Physics Letters
65
發行號12
DOIs
出版狀態Published - 1 十二月 1994

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