Field enhanced oxide charge detrapping in n-MOSFET's

Ta-Hui Wang*, Tse En Chang, Lu Ping Chiang, Chimoon Huang

*Corresponding author for this work

研究成果: Conference article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The field dependence of oxide charge detrapping time in a 0.6 μm DDD n-MOSFET subject to hot carrier stress was characterized. A series of oxide trap charging and discharging conditions were performed using GIDL current as a direct monitor of the transient characteristics of oxide charge detrapping. An analytical model accounting for the GIDL current transient was developed. The measured result shows that the detrapping time is a strong decreasing function of an oxide field, which suggests that the charge detrapping process is mainly via field enhanced tunneling. A quantitative agreement between the measured and the calculated trap time constants was obtained.

原文English
頁(從 - 到)122-125
頁數4
期刊Annual Proceedings - Reliability Physics (Symposium)
DOIs
出版狀態Published - 1 一月 1996
事件Proceedings of the 1996 34th Annual IEEE International Reliability Physics - Dallas, TX, USA
持續時間: 30 四月 19962 五月 1996

指紋 深入研究「Field enhanced oxide charge detrapping in n-MOSFET's」主題。共同形成了獨特的指紋。

引用此