The field dependence of oxide charge detrapping time in a 0.6 μm DDD n-MOSFET subject to hot carrier stress was characterized. A series of oxide trap charging and discharging conditions were performed using GIDL current as a direct monitor of the transient characteristics of oxide charge detrapping. An analytical model accounting for the GIDL current transient was developed. The measured result shows that the detrapping time is a strong decreasing function of an oxide field, which suggests that the charge detrapping process is mainly via field enhanced tunneling. A quantitative agreement between the measured and the calculated trap time constants was obtained.
|頁（從 - 到）||122-125|
|期刊||Annual Proceedings - Reliability Physics (Symposium)|
|出版狀態||Published - 1 一月 1996|
|事件||Proceedings of the 1996 34th Annual IEEE International Reliability Physics - Dallas, TX, USA|
持續時間: 30 四月 1996 → 2 五月 1996