Ferroelectric properties and microstructure of SBT thin films with modified Ta compositions

Fan Yi Hsu*, Chen Ti Hu, Ching Chich Leu, Chao-Hsin Chien

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

The effect of Ta content on the ferroelectric properties of SrBi 2 Ta 1.8 O 9 (SBT) thin films which had been synthesized with MOD and spin coating techniques was investigated in present study. It is found that the electrical properties and microstructures of SBT are greatly affected by the Ta content. Polarization measurements revealed that the Ta-deficiency in SBT led to a relatively low coercive field (2E c ∼ 108 kV/cm) and a high remanent polarization (2P r ∼ 18.4μC/cm 2 ). Once increases the Ta ratio, the 2P r .value decreasing. The Ta-rich SrBi 2 Ta 2.2 O 9 thin films exhibit the poor crystallinity and the poor ferroelectric properties. The improvement of ferroelectric properties in Ta-deficient SBT specimens could be attributed to the uniformly large grain structure and the highly (220) preferential orientation. It is believed that the incorporation of the Ta vacancies during synthesizing process plays an important role in promoting the crystallinity of SiBi 2 Ta 1.8 O 9 films.

原文English
主出版物標題Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia
頁面151-161
頁數11
出版狀態Published - 1 十二月 2006
事件Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia - Quebec City, QC, Canada
持續時間: 15 五月 200520 五月 2005

出版系列

名字Proceedings - Electrochemical Society
PV 2005-13

Conference

ConferenceDielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia
國家Canada
城市Quebec City, QC
期間15/05/0520/05/05

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