Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite

Brian J. Rodriguez, Ying-hao Chu, R. Ramesh, Sergei V. Kalinin

研究成果: Article同行評審

53 引文 斯高帕斯(Scopus)

摘要

The ferroelectric polarization switching behavior at the 24° (100) tilt grain boundary (GB) in an epitaxial multiferroic BiFeO3 bicrystal film is studied using piezoresponse force microscopy (PFM). The PFM amplitudes across positively and negatively poled GB regions suggest the presence of a frozen polarization component at the interface. The switching experiments demonstrate that the GB attracts the domain wall and acts as a pinning center. The PFM results are compared with conductive atomic force microscopy and spectroscopy, which suggest domain wall pinning at the GB can be partially attributed to increased conductance at the GB.

原文English
文章編號142901
期刊Applied Physics Letters
93
發行號14
DOIs
出版狀態Published - 16 十月 2008

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