Facile sol-gel preparation of nanocrystal embedded thin film material for memory device

Chi Chang Wu, Yi Jen Tsai, Pin Lin Liu, Wen Luh Yang, Fu-Hsiang Ko*

*Corresponding author for this work

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

A promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for <5 and <10 % charge loss at applied temperature of 25 and 85 C, respectively. The ethanol system CTFM demonstrates a large memory window (~10 V) and good reliability than 2-propanol (~3 V) due to the existence of several isolated crystals in silicon dioxide film.

原文English
頁(從 - 到)423-430
頁數8
期刊Journal of Materials Science: Materials in Electronics
24
發行號1
DOIs
出版狀態Published - 1 一月 2013

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