Fabrication of selective-emitter silicon heterojunction solar cells using hot-wire chemical vapor deposition and laser doping

B. R. Wu, D. S. Wuu*, M. S. Wan, H. Y. Mao, Ray-Hua Horng

*Corresponding author for this work

研究成果: Article

4 引文 斯高帕斯(Scopus)

摘要

The Si heterojunction (HJ) solar cells were fabricated on the textured p-type mono-crystalline Si (c-Si) substrates using hot-wire chemical vapor deposition (HWCVD). In view of the potential for the bottom cell in a hybrid junction structure, the microcrystalline Si (μc-Si) film was used as the emitter with various PH3 dilution ratios. Prior to the n-μc-Si emitter deposition, a 5 nm-thick intrinsic amorphous Si layer (i-a-Si) was grown to passivate the c-Si surface. In order to improve the indium-tin oxide (ITO)/emitter front contact without using the higher PH3 doping concentration, a laser doping technique was employed to improve the ITO/n-μc-Si contact via the formation of the selective emitter structure. For a cell structure of Ag grid/ITO/n-μc-Si emitter/i-a-Si/textured p-c-Si/Al-electrode, the conversion efficiency (AM1.5) can be improved from 13.25% to 14.31% (cell area: 2 cm × 2 cm) via a suitable selective laser doping process.

原文English
頁(從 - 到)4749-4752
頁數4
期刊Thin Solid Films
517
發行號17
DOIs
出版狀態Published - 1 七月 2009

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