Fabrication of InGaN/GaN nanodisk structure by using bio-template and neutral beam etching process

Yi-Chun Lai, Akio Higo, Chang Yong Lee, Cedric Thomas, Tomoyuki Tanikawa, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Takayuki Kiba, Pei-Chen Yu, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

研究成果: Conference contribution同行評審

摘要

Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed a defect-less, top-down fabrication process for sub-12-nm diameter InGaN quantum nanodisks (NDs) embedded in GaN barrier by using a combination of a bio-template and neutral beam etching. We have achieved high density of 2.6 × 1011 cm-2 with 6-nm in diameter and 15-nm-high nanopillars.

原文English
主出版物標題IEEE-NANO 2015 - 15th International Conference on Nanotechnology
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1278-1281
頁數4
ISBN(電子)9781467381550
DOIs
出版狀態Published - 27 七月 2015
事件15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015 - Rome, Italy
持續時間: 27 七月 201530 七月 2015

出版系列

名字IEEE-NANO 2015 - 15th International Conference on Nanotechnology

Conference

Conference15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015
國家Italy
城市Rome
期間27/07/1530/07/15

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