Fabrication of high-performance ZnO thin-film transistors with submicrometer channel length

Horng-Chih Lin, Rong Jhe Lyu, Tiao Yuan Huang

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

A method was developed to fabricate ZnO thin-film transistors (TFTs) with submicrometer channel length. In this scheme, mature process techniques are used to form a suspending hardmask bridge on the wafer surface, which enables the subsequent construction of a TFT by the sequential deposition of gate oxide, ZnO channel layer, and Al source/drain contacts. Excellent electrical characteristics were demonstrated by the fabricated ZnO TFTs that show high ON/OFF current ratio (> 109), low subthreshold swing (89 mV/decade), and high field-effect mobility (41 cm2 V s). Very small variation in the device characteristics is also demonstrated.

原文English
文章編號6579637
頁(從 - 到)1160-1162
頁數3
期刊IEEE Electron Device Letters
34
發行號9
DOIs
出版狀態Published - 19 八月 2013

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