Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices

I. Chuan Yao*, Dai Ying Lee, Tseung-Yuen Tseng, Pang Lin

*Corresponding author for this work

研究成果: Article

53 引文 斯高帕斯(Scopus)

摘要

This study investigates the resistive switching behavior of Ga-doped ZnO (GZO) nanorod thin films with various Ga/Zn molar ratios. Vertically well-aligned and uniform GZO nanorod thin films were successfully grown on Au/Ti/SiO 2/p-Si substrates using an aqueous solution method. X-ray diffraction (XRD) results indicate that GZO nanorods have [0001] highly preferred orientation. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations show the formation of highly ordered and dense nanorod thin films. These compact GZO nanorod thin films can be used to make resistive switching memory devices. Such memory devices can be reversibly switched between ON and OFF states, with a stable resistance ratio of ten times, narrow dispersion of ON and OFF voltages, and good endurance performance of over 100 cycles. The resistive switching mechanism in these devices is related to the formation and rupture of conducting filaments consisting of oxygen vacancies, occurring at interfaces between GZO nanorods (grain boundaries). Results show that the resulting compact GZO nanorod thin films have a high potential for resistive memory applications.

原文English
文章編號145201
期刊Nanotechnology
23
發行號14
DOIs
出版狀態Published - 13 四月 2012

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