Fabrication and electrical transport properties of nickel monosilicide nanowires

Jeng-Tzong Sheu*, S. P. Yeh, S. T. Tsai, C. H. Lien

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin Nickel films (∼50nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N2 ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared.

原文English
主出版物標題2005 5th IEEE Conference on Nanotechnology
頁面47-50
頁數4
DOIs
出版狀態Published - 1 十二月 2005
事件2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
持續時間: 11 七月 200515 七月 2005

出版系列

名字2005 5th IEEE Conference on Nanotechnology
2

Conference

Conference2005 5th IEEE Conference on Nanotechnology
國家Japan
城市Nagoya
期間11/07/0515/07/05

指紋 深入研究「Fabrication and electrical transport properties of nickel monosilicide nanowires」主題。共同形成了獨特的指紋。

引用此