Fabricating GaN-based LEDs on (-2 0 1) β-Ga2O3 substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition

Yu Pin Lan, Yen Chun Chen, Yi Yun Yeh, Shun Ming Hung

研究成果: Article同行評審

摘要

This study demonstrates two approaches to the growth of GaN-based LEDs on (-2 0 1)-oriented β-Ga2O3 single crystal substrates using metal-organic CVD under atmospheric pressure. One approach induces non-continuous growth between low-temperature undoped-GaN (u-GaN) and high-temperature u-GaN, whereas the other approach induces continuous growth. We observed the following reduction in the FWHM of X-ray diffraction rocking curves: GaN (0 0 2) on (-2 0 1) β-Ga2O3 substrate (from 464 to 342 arcsec) and GaN (1 0 2) (from 886 to 493 arcsec). An LED with six pairs of InGaN/GaN multiple quantum wells was successfully fabricated on the (-2 0 1) β-Ga2O3 single crystal substrate.

原文English
文章編號100908
期刊Japanese Journal of Applied Physics
58
發行號10
DOIs
出版狀態Published - 九月 2019

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