Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique

Asamira Suzuki, Songbeak Choe, Yasuhiro Yamada, Shuichi Nagai, Miori Hiraiwa, Nobuyuki Otsuka, Daisuke Ueda

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

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Chemical Compounds

Engineering & Materials Science

Physics & Astronomy