Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique

Asamira Suzuki, Songbeak Choe, Yasuhiro Yamada, Shuichi Nagai, Miori Hiraiwa, Nobuyuki Otsuka, Daisuke Ueda

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

In this paper, we present a normally-off GaN-based transistor with extremely low on-state resistance fabricated by using Ge-doped n++GaN layer for ohmic contact. We developed a new GaN regrowth technique using Ge, which achieved extremely high doping level of 1 × 1020 cm-3, and thereby the lowest specific contact resistance of 1.5 × 10-6 Ω·cm2. Selectively deposited NiO gate using Atomic Layer Deposition (ALD) technique contributed to shorten the spacing between source and drain, making normally-off characteristics even with the 30% Al mole fraction of AlGaN. The fabricated device showed the record-breaking Ron of 0.95 Ω·mm with maximum drain current (Id,MAX) and transconductance (gm) of 1.1 A/mm and 490 mS/mm, respectively. It is noted that the obtained Vth was 0.55 V. An on/off current ratio of 5 × 106 is also achieved.

原文English
主出版物標題2014 IEEE International Electron Devices Meeting, IEDM 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面11.1.1-11.1.4
2015-February
版本February
ISBN(電子)9781479980017
ISBN(列印)9781479980000
DOIs
出版狀態Published - 20 二月 2015
事件2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
持續時間: 15 十二月 201417 十二月 2014

Conference

Conference2014 60th IEEE International Electron Devices Meeting, IEDM 2014
國家United States
城市San Francisco
期間15/12/1417/12/14

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