Extraction of front and buried oxide interface trap densities in fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor

In this letter, a method is proposed and demonstrated for the first time to characterize and decouple the interface traps of both the frontand back channels of fully-depleted silicon-on-insulator (FD-SOI) metal-oxide- semiconductor field-effect transistor (MOSFET).We report the procedure and the underlying theory that allows the extraction of the energy profiles of the densities of the interface traps (Dit).This technique will be very useful for evaluating the interface qualities of future FD-SOI transistors.