Extraction and Simulation with time dependent Vth shift model for IGZO panel

Zhongyuan Wu, Kun Cao, Longyan Wang, Jingwen Yin, Quanhu Li, Yongqian Li, Cuili Gai, Baoxia Zhang, Gang Wang, Scott Lin, Chi Wei Wang, Leon Huang, You Pang Wei, Po-Tsun Liu

研究成果: Conference article同行評審

1 引文 斯高帕斯(Scopus)


The impact of stress effect to the performance of an IGZO panel is discussed in this paper. Depart from conventional method of observing the threshold voltage (Vth) shift, the time dependency of serial ID-VG test is included in building an accurate Vth shift model. The model can be used to simulate the IGZO TFT current change under fixed bias for aiding the circuit design and optimization.

頁(從 - 到)1184-1187
期刊Digest of Technical Papers - SID International Symposium
發行號Book 3
出版狀態Published - 1 六月 2015
事件2015 SID International Symposium - San Jose, United States
持續時間: 2 六月 20153 六月 2015

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