Extension of BSIM3 model incorporating velocity overshoot

Dennis Sinitsky*, Fariborz Assaderaghi, Michael Orshansky, Jeffrey Bokor, Chen-Ming Hu

*Corresponding author for this work

研究成果: Paper同行評審

摘要

In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for Id looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.

原文English
頁面307-310
頁數4
DOIs
出版狀態Published - 1 一月 1997
事件Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
持續時間: 3 六月 19975 六月 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
城市Taipei, China
期間3/06/975/06/97

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