Extension of BSIM3 model incorporating velocity overshoot

Dennis Sinitsky; Fariborz Assaderaghi; Michael Orshansky; Jeffrey Bokor; Chen-Ming Hu

doi:10.1109/VTSA.1997.614916

Extension of BSIM3 model incorporating velocity overshoot

Dennis Sinitsky^*, Fariborz Assaderaghi, Michael Orshansky, Jeffrey Bokor, Chen-Ming Hu

^*Corresponding author for this work

國際半導體產業學院

研究成果: Paper › 同行評審

摘要

In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for I_d looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.

原文	English
頁面	307-310
頁數	4
DOIs	https://doi.org/10.1109/VTSA.1997.614916
出版狀態	Published - 1 一月 1997
事件	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China 持續時間: 3 六月 1997 → 5 六月 1997

Conference

Conference	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
城市	Taipei, China
期間	3/06/97 → 5/06/97

存取文件

10.1109/VTSA.1997.614916

其它文件與鏈接

Link to publication in Scopus

指紋深入研究「Extension of BSIM3 model incorporating velocity overshoot」主題。共同形成了獨特的指紋。

引用此

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abstract = "In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for Id looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.",

author = "Dennis Sinitsky and Fariborz Assaderaghi and Michael Orshansky and Jeffrey Bokor and Chen-Ming Hu",

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AU - Assaderaghi, Fariborz

AU - Orshansky, Michael

AU - Bokor, Jeffrey

AU - Hu, Chen-Ming

PY - 1997/1/1

Y1 - 1997/1/1

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AB - In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for Id looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.

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