In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for Id looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.
|出版狀態||Published - 1 一月 1997|
|事件||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China|
持續時間: 3 六月 1997 → 5 六月 1997
|Conference||Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications|
|期間||3/06/97 → 5/06/97|