Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer

Yi Lin Tsai, Sheng Kai Huang, Huang Hsiung Huang, Shu Mei Yang, Kai Ling Liang, Wei Hung Kuo, Yen Hsiang Fang, Chih I. Wu, Shou Wei Wang, Hsiang Yun Shih, Zhiyu Xu, Minkyu Cho, Shyh Chiang Shen, Chien Chung Lin*

*Corresponding author for this work

研究成果: Article同行評審

摘要

We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.

原文English
文章編號9256288
頁數10
期刊IEEE Photonics Journal
12
發行號6
DOIs
出版狀態Published - 十二月 2020

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