Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

Chung Chun Hsu, Wei Chun Chi, Yi He Tsai, Chen Han Chou, Che Wei Chen, Hung Pin Chien, Shang Shiun Chuang, Guang Li Luo, Yao Jen Lee, Chao Hsin Chien*

*Corresponding author for this work

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

This paper presents a high-performance Ge p-channel MOSFET (pMOSFET) with NiGePt as a ternary-phase alloy of Schottky source/drain (S/D) formed through low-temperature microwave-activated annealing (MWA). We fabricated a NiGePt alloy contact with uniform crystallinity through structural engineering and MWA. We clarified the phenomena of thermal reaction and diffusion for forming ternary-phase alloys using MWA properties such as thermal dynamics and ionic transportation. The ternary-phase NiGePt alloy is crucial for improving the off-leakage current of the junction. A lower process temperature is beneficial for eliminating surface roughness and reducing alloy agglomeration of the Schottky contact S/D. Consequently, the fabricated NiGePt/n-Ge Schottky junction exhibited a high effective barrier height (ΦBn) of 0.59 eV, resulting in a high junction current ratio of more than 105 at an applied voltage of /Va/ = 1 V. In addition, we exploited the advantages of low-temperature microwave annealing to fabricate the pMOSFET, which includes a GeO2 passivation layer and a Schottky S/D. Our ternary Schottky Ge pMOSFET ( L = 4 μm) exhibited high IONIOFF ratios of approximately 3.7 × 103 (ID) and 1.3 × 105 (IS) and a moderate subthreshold swing of 126 mV/dec.

原文English
文章編號7484321
頁(從 - 到)2714-2721
頁數8
期刊IEEE Transactions on Electron Devices
63
發行號7
DOIs
出版狀態Published - 1 七月 2016

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