Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET with High Tunneling Current and High ON/OFF Ratio

Pei Yu Wang, Bing-Yue Tsui

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

A CMOS process compatible p-channel tunnel field-effect transistor (TFET) with an epitaxial tunnel layer (ETL) structure is demonstrated experimentally. The fabricated ETL p-TFET exhibits high tunneling current (ION ∼ 0.17 μA/μm at /VG/ = 0.5 V after VTH adjustment), ultra-low OFF-state current, and good average subthreshold swing (S.S. ∼100 mV/ decade up to 10 nA/μm). Overall performance exceeds that of the current state-of-the-art Ge-based planar p-TFETs.

原文English
文章編號7293092
頁(從 - 到)1264-1266
頁數3
期刊IEEE Electron Device Letters
36
發行號12
DOIs
出版狀態Published - 1 十二月 2015

指紋 深入研究「Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET with High Tunneling Current and High ON/OFF Ratio」主題。共同形成了獨特的指紋。

引用此