Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes

Yi An Chang*, Sheng Horng Yen, Tsung Hsine Ko, Te Chung Wang, Chun Yi Lu, Hao-Chung Kuo, Yen Kuang Kuo, Tien-chang Lu, Shing Chung Wang

*Corresponding author for this work

研究成果: Conference contribution同行評審

摘要

A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

原文English
主出版物標題Quantum Electronics and Laser Science Conference, QELS 2006
發行者Optical Society of America
ISBN(列印)1557528136, 9781557528131
DOIs
出版狀態Published - 1 一月 2006
事件Quantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
持續時間: 21 五月 200621 五月 2006

出版系列

名字Optics InfoBase Conference Papers
ISSN(電子)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2006
國家United States
城市Long Beach, CA
期間21/05/0621/05/06

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