Excess hot-carrier currents in SOI MOSFETs and its implications

Pin Su, Ken Ichi Goto, T. Sugii, Chen-Ming Hu

研究成果: Conference contribution同行評審

6 引文 斯高帕斯(Scopus)

摘要

This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free ISUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2 V.

原文English
主出版物標題2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
發行者Institute of Electrical and Electronics Engineers Inc.
頁面93-97
頁數5
ISBN(電子)0780373529
DOIs
出版狀態Published - 1 一月 2002
事件40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States
持續時間: 7 四月 200211 四月 2002

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2002-January
ISSN(列印)1541-7026

Conference

Conference40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
國家United States
城市Dallas
期間7/04/0211/04/02

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